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New WD Flash Memory Technology To Boost SSD Performance And Capacity – Forbes

WD BiCS5 3D NAND.

WD

The solid state storage market continues to advance at an accelerated rate in an effort to keep pace with the ever-increasing amounts of data being generated. Early solid state drives featured SLC (Single Level Cell) NAND flash memory; then came MLC (Multi-Level Cell), then TLC (Triple-Level Cell) and so on, as manufacturers increased cell density, to help push costs down, and ultimately improve solid state storage’s cost per gigabyte relatively to traditional spinning magnetic media. That’s a somewhat simplified explanation, and there have obviously been other advances over the years as well, but it is generally how NAND progressed in the SSD space.

Today, WD (Western Digital) announced a new flavor of NAND flash memory that will continue to push NAND capacity and performance upward, while also optimizing costs. WD announced that it has successfully developed its fifth-generation BiCS5 3D NAND technology, in a joint operation with manufacturing partner Kioxia Corporation (formerly Toshiba).

“As we move into the next decade, a new approach to 3D NAND scaling is critical to continuing to meet the demands of the rising volume and velocity of data,” said Dr. Steve Paak, senior vice president of memory technology and manufacturing at Western Digital. “Our successful production of BiCS5 is an illustration of Western Digital’s ongoing leadership in flash memory technology and strong execution to our roadmap. By leveraging new advancements to our multi-tier memory hole technology to increase density laterally as well as adding more storage layers, we have significantly scaled the capacity and performance of our 3D NAND technology, while continuing to deliver the reliability and cost which our customers expect.”

"WD

A WD SN500 NVMe Solid State Drive.

WD

WD’s BiCS5 technology scales both vertically and laterally versus previous gen products. It is currently being built on triple-level-cell (TLC) and quad-level-cell (QLC) technologies, and leverages what WD is calling its second-generation multi-tier memory hole technology, with 112-layers of vertical memory capability. WD claims BiCS5 offers up to 40% more bits per wafer and up to 50% higher I/O performance than pervious-gen BiCS4 technology, which featured up to 96-layers.

WD has begun initial production of BiCS5 TLC in a 512Gb capacity and is already shipping consumer products featuring the new technology. In the second half of 2020, however, WD expects capacities to increase all the way up to 1.33Tb.

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WD BiCS5

WD BiCS5 3D NAND.

WD

The solid state storage market continues to advance at an accelerated rate in an effort to keep pace with the ever-increasing amounts of data being generated. Early solid state drives featured SLC (Single Level Cell) NAND flash memory; then came MLC (Multi-Level Cell), then TLC (Triple-Level Cell) and so on, as manufacturers increased cell density, to help push costs down, and ultimately improve solid state storage’s cost per gigabyte relatively to traditional spinning magnetic media. That’s a somewhat simplified explanation, and there have obviously been other advances over the years as well, but it is generally how NAND progressed in the SSD space.

Today, WD (Western Digital) announced a new flavor of NAND flash memory that will continue to push NAND capacity and performance upward, while also optimizing costs. WD announced that it has successfully developed its fifth-generation BiCS5 3D NAND technology, in a joint operation with manufacturing partner Kioxia Corporation (formerly Toshiba).

“As we move into the next decade, a new approach to 3D NAND scaling is critical to continuing to meet the demands of the rising volume and velocity of data,” said Dr. Steve Paak, senior vice president of memory technology and manufacturing at Western Digital. “Our successful production of BiCS5 is an illustration of Western Digital’s ongoing leadership in flash memory technology and strong execution to our roadmap. By leveraging new advancements to our multi-tier memory hole technology to increase density laterally as well as adding more storage layers, we have significantly scaled the capacity and performance of our 3D NAND technology, while continuing to deliver the reliability and cost which our customers expect.”

WD SN500 SSD

A WD SN500 NVMe Solid State Drive.

WD

WD’s BiCS5 technology scales both vertically and laterally versus previous gen products. It is currently being built on triple-level-cell (TLC) and quad-level-cell (QLC) technologies, and leverages what WD is calling its second-generation multi-tier memory hole technology, with 112-layers of vertical memory capability. WD claims BiCS5 offers up to 40% more bits per wafer and up to 50% higher I/O performance than pervious-gen BiCS4 technology, which featured up to 96-layers.

WD has begun initial production of BiCS5 TLC in a 512Gb capacity and is already shipping consumer products featuring the new technology. In the second half of 2020, however, WD expects capacities to increase all the way up to 1.33Tb.

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Muhammad Zeeshan

Freelancer and a blogger with a focus on technology.

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